Implementing propagating low- temperature synthesis to produce pure silicon carbide

Abstract

The results of research into the formation of ultrapure silicon carbide by propagating synthesis are described in the paper. This synthesis provides a reduction of process time and energy costs. It is established that the main structural transition is caused by phase transformations and polymorphism phenomenon in silica (α-SiO₂ to β-SiO₂ transition) which is necessary to produce pure silicon carbide. It is determined that in a given time interval under the influence of imposed conditions and subsequent interaction with silicic acid and active carbon begins spontaneous transition with the formation of ultrapure silicon carbide. The implementation of the proposed technology increases the silicon carbide yield to 95‒99 % with a nanoscale product (40‒60 nm) of 99,99 % purity